Array substrate, liquid crystal display device having the same and method for manufacturing the same thereof

ABSTRACT

An array substrate, including a substrate, a multi-layer electrode and a switch element, is provided. The multi-layer electrode is disposed on the substrate and comprises an electric conductive layer and a first etch-stop layer. The electric conductive layer covers the first etch-stop layer. The switch element is disposed on the substrate and electrically connected to the multi-layer electrode, and has a second etch-stop layer.

This application is a Divisional of U.S. patent application Ser. No.13/798,255, filed Mar. 13, 2013 and entitled “ARRAY SUBSTRATE, LIQUIDCRYSTAL DISPLAY DEVICE HAVING THE SAME AND METHOD FOR MANUFACTURING THESAME THEREOF”, now U.S. Pat. No. 9,331,162, which claims the benefit ofTaiwan patent application serial number 101112678, filed Apr. 10, 2012,the contents of which are incorporated herein by reference.

BACKGROUND

Field of the Invention

The disclosure relates in general to an array substrate and a method formanufacturing the array substrate, and more particularly to an LCDdevice having the array substrate.

Description of the Related Art

In recent years, the liquid crystal display (LCD) has been widely usedin the display screen of electronic products. The LCD has differentvarieties such as twister nematic (TN), super twisted nematic, (STN),in-plane switching (IPS), and multi-domain vertical alignment (MVA). Avoltage may be applied to control the rotation direction of liquidcrystal molecules and adjust the polarization direction of the light, soas to affect the luminous flux and generate a contrast between thebright state and the dark state and display an image.

To control the direction of liquid crystal molecules, nematic liquidcrystal is used in a conventional display device. An alignmentprocessing is performed on the surface of the substrate of theconventional display device to control the alignment of liquid crystalmolecules. For example, a rubbing treatment is performed, that is, thesurface of the alignment film coated on the surface of the substratecontacting the liquid crystal is rubbed with a cloth material. Therubbing treatment not only increases the manufacturing cost but alsoaffects the display quality. Besides, the display device using nematicliquid crystal has a long response time which is unfavorable to thedynamic image display in the sequential color method. The display deviceusing nematic liquid crystal further requires a color filter film toachieve color display, and both the manufacturing cost and complexity inthe manufacturing process are increase.

SUMMARY

The disclosure is directed to an array substrate and a method formanufacturing the same. The liquid crystal display (LCD) device havingthe array substrate requires a lower driving voltage.

According to a first aspect of the present invention, an arraysubstrate, comprising a substrate, a multi-layer electrode and a switchelement is provided. The multi-layer electrode is disposed on thesubstrate, and comprises an electric conductive layer and a firstetch-stop layer. The electric conductive layer covers the firstetch-stop layer. The switch element is disposed on the substrate andelectrically connected to the multi-layer electrode, and has a secondetch-stop layer. The first and the second etch-stop layer are formed bythe same material.

According to a second aspect of the present invention, an LCD device,comprising a first substrate, a second substrate, a medium layer and amulti-layer electrode, is provided. The first and the second substrateare positioned oppositely. The medium layer is disposed between thefirst substrate and the second substrate. The multi-layer electrode isdisposed on the first substrate, and comprises an electric conductivelayer and a first etch-stop layer. The electric conductive layer coversthe first etch-stop layer. The switch element is disposed on the firstsubstrate and electrically connected to the multi-layer electrode, andhas a second etch-stop layer. The first and the second etch-stop layerare formed by the same material.

According to a third aspect of the present invention, a method formanufacturing an LCD device is provided. The method comprises thefollowing steps. A first substrate is provided. A multi-layer electrodeis formed on the first substrate, the multi-layer electrode comprises anelectric conductive layer and a first etch-stop layer covered by theelectric conductive layer. A switch element is formed on the substrateand located at one side of the multi-layer electrode, the switch elementhas a second etch-stop layer, and the first and the second etch-stoplayer are formed by the same material. The multi-layer electrode and theswitch element are electrically connected. A second substrate isprovided. The first substrate and the second substrate are assembled asa pair. A medium layer is formed between the first substrate and thesecond substrate.

The above and other aspects of the invention will become betterunderstood with regard to the following detailed description butnon-limiting embodiment(s). The following description is made withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic diagram of a blue phase liquid crystal displaydevice known by the inventor;

FIGS. 2˜7, 8A˜8C, 9A˜9C are cross-sectional views showing a process ofmanufacturing an array substrate according to an embodiment of theinvention;

FIGS. 10A˜10F show different forms of a multi-layer electrode accordingto an embodiment of the invention;

FIGS. 11A˜11B show a flowchart of a method for manufacturing an arraysubstrate according to an embodiment of the invention;

FIGS. 12˜16 show a process for manufacturing an array substrateaccording to another embodiment of the invention;

FIGS. 17˜23 show top views of a process for manufacturing an arraysubstrate according to an embodiment of the invention;

FIGS. 24A˜24C show other forms of the multi-layer electrode of FIG. 23;

FIGS. 25A˜25B show a flowchart of a method for manufacturing an arraysubstrate according to a second embodiment of the invention.

DETAILED DESCRIPTION

The disclosure provides a method for resolving the problem that thedriving voltage of (blue phase) liquid crystal is too large, and anarray substrate and a liquid crystal display (LCD) device using the sameare used in the method for resolving the above problem.

Referring to FIG. 1, a schematic diagram of a blue phase liquid crystaldisplay device known by the inventor is shown. As indicated in FIG. 1,the display device 10 has a substrate 100 and a substrate 120, and apolarizer 101 and a polarizer 121 are respectively disposed on thesubstrate 100 and the substrate 120. The medium layer 110, being aliquid crystal layer or a blue phase liquid crystal layer, is disposedbetween the substrate 100 and the substrate 120. In the presentembodiment, the medium layer 110 is disposed between the substrate 100and the substrate 120, while the pixel electrode 102 and the commonelectrode 104 are disposed on the same surface of the substrate 100. Thethin film transistor (TFT) (not illustrated) changes the electric field113 generated between two electrodes by adjusting the voltage applied tothe pixel electrode 102 and the common electrode 104, and accordinglycontrols the magnitude of the optical anisotropy of the medium layer110. In the present embodiment, a reference voltage of the commonelectrode 104 is identical to a common voltage. In other embodiment, thereference voltage of the common electrode 104 may be different from thecommon voltage.

The medium layer 110 of the display device 10 achieves display effectthrough the zero birefringence phenomenon occurring when no electricfield is applied, and the birefringence phenomenon occurring when anelectric field is applied to the blue phase liquid crystal. The brightand dark states of the medium layer 110 are adjusted by changing thevoltage difference between the pixel electrode 102 and the commonelectrode 104. The blue phase liquid crystal is optically isotropic whenno electric field is applied thereto, and the alignment layer is notused. The operating temperature of the blue phase liquid crystal has anarrower range. The reticular formation of polymers stabilizes themedium layer 110 such that the operating temperature of the blue phaseliquid crystal is increased. The polymer stabilized blue phase (PSBP)liquid crystal does not change the high response speed of the blue phaseliquid crystal, but the voltage applied to the medium layer 110 isrequired to be increased for adjusting the bright and dark states of thedisplay. The inventor herein provides an array substrate havingelectrodes with a higher height, such that the equivalent horizontalelectric field between the electrodes is increased when the samemagnitude of voltage is applied to the electrodes. Therefore, therequired driving voltage is reduced.

First Embodiment

FIGS. 2˜10 are cross-sectional views showing a process of manufacturingan array substrate 20 according to an embodiment of the invention. Thearray substrate 20 comprises a wiring region A1 and an aperture regionA2. Here, the connection zone between the wiring region A1 and theaperture region A2 is omitted, and instead, an interrupted cross-sectionis illustrated. FIGS. 17˜23 show top views of a process formanufacturing an array substrate 20 according to an embodiment of theinvention. As indicated in FIGS. 2 and 17, a substrate 200 extending ona plane is provided. A first metal layer 202 is formed on the substrate200 but only a part of the first metal layer 202 is illustrated in FIG.17. In fact, the first metal layer 202 may extend to two lateral sides,and the extension portion is illustrated in an interruptedcross-section. The first metal layer 202 may be realized by amulti-layer structure or an alloy. For example, the first metal layer202 is formed by materials selected from a group consisting of aluminum,copper, molybdenum, neodymium (Nd) and a combination thereof. Asindicated in FIGS. 3 and 18, an insulating layer 204 is formed on thefirst metal layer 202 and the substrate 200. The insulating layer 204 isrealized by such as a gate insulating layer (ex. SiNx). An active layer206 is formed on the insulating layer 204. The active layer 206 isrealized by an amorphous silicon (a-Si) film or an amorphous InGaZnO(a-IGZO) film.

As indicated in FIGS. 4 and 19, a first etch-stop layer 208 a and asecond etch-stop layer 208 b are formed on the active layer 206. Thefirst etch-stop layer 208 a and the second etch-stop layer 208 b arerespectively disposed in the aperture region A2 and the wiring regionA1. The first etch-stop layer 208 a and the second etch-stop layer 208 bmay be concurrently or subsequently formed in the same step of themanufacturing process. The first etch-stop layer 208 a and the secondetch-stop layer 208 b may be formed by materials selected from siliconinsulating (SiOx) or silicon nitride (SiNx). In another embodiment, thefirst etch-stop layer 208 a and the second etch-stop layer 208 b may beformed in different steps of the manufacturing process according toactual needs.

As indicated in FIG. 5, a doping process may be selectively performed todope a semiconductor impurity on the surface of the active layer 206 notcovered by the second etch-stop layer 208 b and the second etch-stoplayer 208 b. A doping layer 206-1 and a non-doped active layer 206-2 areformed in the doping process.

Referring to FIGS. 6 and 20, a second metal layer 210 is formed on thedoping layer 206-1 and a part of the second etch-stop layer 208 b. FIG.20 only illustrates a part of the second metal layer 210. In reality,the second metal layer 210 may extend to two lateral sides, and theextension portion is illustrated in an interrupted cross-section. Asindicated in FIGS. 6˜7, the second metal layer 210 and the firstetch-stop layer 208 a are used as a mask, and the non-shielded dopinglayer 206-1 and the non-doped active layer 206-2 are removed to form anopening V, an active layer 206 a, a doping layer 206 b and an activelayer 206 c as indicated in FIGS. 7 and 21. In an embodiment, an extramasking process may be performed. That is, a part of the doping layer206-1 and a part of the non-doped active layer 206-2 are removed to forman opening V first, and then the second metal layer 210 is formed on thedoping layer 206 b and a part of the second etch-stop layer 208 b. Inother words, the sequence for forming the second metal layer 210 and theopening V is not restrictive. Due to the interruption in thecross-section, FIGS. 6˜7 only illustrate the opening V.

As indicated in FIGS. 7 and 21, the first metal layer 202, theinsulating layer 204, the active layer 206 a, the doping layer 206 b,the second etch-stop layer 208 b and the second metal layer 210constitute a switch element S. In this embodiment, the switch element Sis realized by a thin film transistor (TFT). In addition, the firstmetal layer 202, the insulating layer 204, the active layer 206 a, thedoping layer 206 b and the second metal layer 210 also constitute astorage capacitor C.

Referring to FIGS. 8A and 22, an electric conductive layer 216 is formedon the insulating layer 204 and the first etch-stop layer 208 a, and maycover the lateral sides of a stacking structure constituted by theactive layer 206 c and the first etch-stop layer 208 a. The electricconductive layer 216 is formed by materials selected from a groupconsisting of metal, indium tin insulating, indium zinc insulating, zincindium tin insulating, indium gallium zinc insulating and a combinationthereof. The active layer 206 c, the first etch-stop layer 208 a and theelectric conductive layer 21 constitute a multi-layer electrode L1. Onlya part of the multi-layer electrode is illustrated in thecross-sectional view. The multi-layer electrodes may be arranged in aregular or irregular manner.

As indicated in FIGS. 8A and 23, a dielectric layer 212 may be formed onthe second etch-stop layer 208 b and the second metal layer 210depending on the needs of the manufacturing process. The dielectriclayer 212 may realized by a light blocking layer such as an opaqueorganic dielectric layer. In another embodiment, the switch element Smay be realized by a thin film transistor TFT having an IGZO activelayer. Under such circumstance, the light blocking layer may not beneeded. In an embodiment, a gap adjustment layer (not illustrated)and/or a protection layer (not illustrated) may be formed on thedielectric layer 212 depending on the needs of the manufacturingprocess. When the substrates are assembled in pair, the gap adjustmentlayer maintains the gap between the substrates, and the protection layeravoids the liquid crystal directly contacting the light blocking layer.In another embodiment, the gap adjustment layer may have spacers. Inanother embodiment, depending on the needs of the manufacturing process,another protection layer (not illustrated) may be disposed to separatethe dielectric layer 212 and the electric conductive layer 216 from thesecond etch-stop layer 208 b and the second metal layer 210 to protectthe thin film transistor TFT.

Referring to FIG. 8A, a cross-sectional view of an array substrate 20-1along the cross-sectional line 2-2 of FIG. 23 is shown. FIG. 8A onlyillustrates a part of the opening V. As indicated in FIGS. 8A and 23,the array substrate 20-1 comprises a switch element S, a storagecapacitor C and a multi-layer electrode L1. The switch element S and thestorage capacitor C are disposed in the wiring region A1. Themulti-layer electrode L1 is disposed in the aperture region A2. Themulti-layer electrode L1 has a maximum width D1 and a maximum height H1.When the invention is used in a fringe field switching (FFS) displaydevice, another electric conductive layer (not illustrated) may beformed between the substrate 200 and the insulating layer 204 of thearray substrate 20-1. The insulating layer 204 provides electricinsulation.

FIG. 23 only illustrates a top view of a multi-layer electrode L1, andis not for limiting the structure of the multi-layer electrode L1. Theshape of the multi-layer electrode L1 may be symmetric or assymetricsuch as jagged, radial or comb-like. Referring to FIGS. 24A˜24C, otherviews of the multi-layer electrode L1 of FIG. 23 are shown.

Referring to FIGS. 7 and 8B. In an embodiment, after the step of FIG. 7,a protection layer 213 a and a protection layer 213 b are immediatelyformed after the second metal layer 210 is formed. The protection layer213 a covers a part of the second metal layer 210 for protecting thesecond metal layer 210 and the thin film transistor TFT. The protectionlayer 213 b may be selectively formed on the first etch-stop layer 208a. Next, a dielectric layer 212′ (such as a light blocking layer) isformed on the protection layer 213 a. Lastly, a electric conductivelayer 216 is formed to form a multi-layer electrode L1′ and cover theexposed second metal layer 210 for conducting the signal. The protectionlayer 213 b increases the height of the multi-layer electrode L1′. Themulti-layer electrode L1′ has a maximum width D1′ and a maximum heightH1′.

Referring to FIGS. 7 and 8C. In an embodiment, after the step of FIG. 7,a part of the insulating layer 204 may be etched to expose the substrate200, and an insulating layer 204′ is formed as indicated in FIG. 8C.Next, an electric conductive layer 216 is formed on the exposedsubstrate 200 and the first etch-stop layer 208 a to cover a stackingstructure constituted by the insulating layer 204′, the active layer 206c and the first etch-stop layer 208 a to form a multi-layer electrodeL2. The multi-layer electrode L2 has a maximum width D2 and a maximumheight H2. The array substrate 20-2 comprises a switch element S, astorage capacitor C and a multi-layer electrode L2. The switch element Sand the storage capacitor C are disposed in the wiring region A1. Themulti-layer electrode L2 is disposed in the aperture region A2. In thepresent embodiment, since the insulating layer 204′ also forms a part ofthe multi-layer electrode L2, the overall height of the multi-layerelectrode L2 can thus be increased.

It is noted that the electric conductive layer 216 of the multi-layerelectrode L1, the multi-layer electrode L1′ and the multi-layerelectrode L2 in FIGS. 8A˜8C may be disposed on the first etch-stop layer208 a without covering the lateral sides (not illustrated) of thestacking structure.

Referring to FIGS. 8A˜8C. In an embodiment, the electric conductivelayer 216 is formed before the step of forming the dielectric layer 212(not illustrated) is performed. In other words, the sequence of formingthe dielectric layer 212 and the electric conductive layer 216 is notrestrictive.

In another embodiment, in the step of forming the dielectric layer 212illustrated in FIG. 8A, when the dielectric layer 212 is formed on thesecond etch-stop layer 208 b and the second metal layer 210, thedielectric layer 214 is concurrently formed on the first etch-stop layer208 a as indicated in FIG. 9A. The dielectric layer 214 and thedielectric layer 212 may be formed by the same material such as resin.Next, an electric conductive layer 216 is formed on the insulating layer204 and the dielectric layer 214 to form a multi-layer electrode L3. Themulti-layer electrode L3 has a maximum width D3 and a maximum height H3.The electric conductive layer 216 may selectively cover the lateralsides of the stacking structure constituted by the active layer 206 c,the first etch-stop layer 208 a and the dielectric layer 214. The arraysubstrate 20-3 comprises a switch element S, a storage capacitor C and amulti-layer electrode L3. The switch element S and the storage capacitorC are disposed in the wiring region A1. The multi-layer electrode L3 isdisposed in the aperture region A2. Since the dielectric layer 214 alsoforms a part of the multi-layer electrode L3, the overall height of themulti-layer electrode L3 can thus be increased.

As indicated in FIG. 9B, the array substrate 20-4 comprises a switchelement S, a storage capacitor C and a multi-layer electrode L4. Theswitch element S and the storage capacitor C are disposed in the wiringregion A1. The multi-layer electrode L4 is disposed in the apertureregion A2. The multi-layer electrode L4 has a maximum width D4 and amaximum height H4. The array substrate 20-4 is similar to the arraysubstrate 20-3 of FIG. 9A except that the multi-layer electrode L4further comprises an insulating layer 204′.

Referring to FIG. 9C, the array substrate 20-5 is formed after the stepof FIG. 7. After the step of FIG. 7, another dielectric layer 218 (suchas a gap adjustment layer) is subsequently formed on the dielectriclayer 212, and another dielectric layer 217 is concurrently formed onthe dielectric layer 214. Next, a multi-layer electrode L5 covered by anelectric conductive layer 216 is formed. The electric conductive layer216 is disposed on only one of the layers of the multi-layer electrodeL5 or on the top layer of the multi-layer electrode L5, and mayselectively cover the lateral sides of the multi-layer electrode L5. Themulti-layer electrode L5 has a maximum width D5 and a maximum height H5.As indicated in FIG. 9C, the array substrate 20-5 comprises a switchelement S, a storage capacitor C and a multi-layer electrode L5. Theswitch element S and the storage capacitor C are disposed in the wiringregion A1. The multi-layer electrode L5 is disposed in the apertureregion A2. The dielectric layer 217 and the dielectric layer 218 may beformed by the same material such as translucent resin or an organic orinorganic material.

In another embodiment, the electric conductive layer 216 may be formedearlier than the dielectric layer 218 (not illustrated). In other words,the sequence of forming the dielectric layer 218 and the electricconductive layer 216 is not restrictive.

It is noted that the shape, width, height of each layer of themulti-layer electrodes L1˜L5 and the stacking manner are notrestrictive. Furthermore, the structure of each layer of the multi-layerelectrode L1 does not have to be symmetric. Let the multi-layerelectrode L2 and the multi-layer electrode L3 be taken for example.Referring to FIGS. 10A˜10F, the types of the multi-layer electrode L2 ofFIG. 8B or the multi-layer electrode L3 of FIG. 9A are shown. Thedesignations x1˜x5 are realized by such as the insulating layer 204′ ofthe multi-layer electrode L2. The designations y1˜y5 are realized bysuch as the active layer 206 c of the multi-layer electrode L2. Thedesignations z1˜z5 are realized by such as the first etch-stop layer 208a of the multi-layer electrode L2. The designations x1˜x5 may also berealized by such as the active layer 206 c of the multi-layer electrodeL3. The designations y1˜y5 are realized by such as the first etch-stoplayer 208 a of the multi-layer electrode L3. The designations z1˜z5 arerealized by such as the dielectric layer 214 of the multi-layerelectrode L2.

As indicated in FIGS. 10A˜10F, the shapes, widths, and heights of thedesignations x1˜x5, the designations y1˜y5 and the designations z1˜z5are not restrictive, and may cover any possible forms of stackingstructure. In the present embodiment, the electric conductive layer 216covers the sidewalls of the multi-layer electrode L2 and the multi-layerelectrode L3. In an embodiment, the electric conductive layer 216 atleast needs to be disposed in the structure of the multi-layer electrodeL2 and the multi-layer electrode L3, and the electric conductive layer216 does not have to cover the sidewalls of the multi-layer electrode L2and the multi-layer electrode L3. Preferably, the electric conductivelayer 216 is disposed on the top of the multi-layer electrode L2 and themulti-layer electrode L3.

Referring to FIGS. 11A˜11B, a flowchart of a method for manufacturing anarray substrate according to an embodiment of the invention is shown.The flowchart illustrates a possible process for manufacturing the arraysubstrate of the first embodiment, and is not for limiting theinvention. Each of the steps S100˜S121 may be modified or adjusted tofit the needs of the manufacturing process. Steps S100˜S108 correspondto the flowchart of FIGS. 2˜5. Step S110˜S117 correspond to theflowchart of FIGS. 6, 7, 8A, 8B and the flowchart of 9A˜9B. In stepS112, the array substrate 20-1 of FIG. 8A is obtained if the insulatinglayer 204 not shielded by the second metal layer 210 is not removed, andthe array substrate 20-2 of FIG. 8B is obtained if the insulating layer204 not shielded by the second metal layer 210 is removed.

In step S114, the array substrate 20-3 of FIG. 9A is obtained if thedielectric layer 214 is formed on the first etch-stop layer 208 a in theaperture region A2 and the insulating layer 204 not shielded by thesecond metal layer 210 is not removed in step S112. The array substrate20-4 of FIG. 9B is obtained if the insulating layer 204 not shielded bythe second metal layer 210 is removed in step S112 and the dielectriclayer 214 is formed on the first etch-stop layer 208 a in the apertureregion A2 in step S114.

Steps S110˜S119 correspond to the flowchart of FIG. 9C. Suppose theinsulating layer 204 not shielded by the second metal layer 210 isremoved in step S112, and the dielectric layer 214 is formed on thefirst etch-stop layer 208 a of the aperture region A2 in step S114.Then, the method proceeds to step S116, the array substrate 20-5 of FIG.9C is obtained if the dielectric layer 217 is concurrently disposed onthe first etch-stop layer 208 a of the aperture region A2 when the gapadjustment layer 218 and/or a protection layer (not illustrated) isdisposed.

In an embodiment, the steps S110˜S121 may also be used. In step S115,the electric conductive layer 216 is formed on the first etch-stop layer208 a. Then, the method proceeds to step S118, the dielectric layer 214is formed on the second etch-stop layer 208 b in the wiring region A1,and the dielectric layer 214 is selectively on the first etch-stop layer208 a in the aperture region A2. Then, the method proceeds to step S121,a gap adjustment layer and/or a protection layer is formed on thedielectric layer 214 in the wiring region A1.

Second Embodiment

Referring to FIGS. 12˜16, a process for manufacturing an array substrate30 according to another embodiment of the invention is shown. The arraysubstrate 30 comprises a wiring region A1 and an aperture region A2.Here, the connection zone between the wiring region A1 and the apertureregion A2 is omitted, and instead an interrupted cross-section isillustrated. Referring to FIG. 12. Firstly, a substrate 300 is provided.A first metal layer 302 is formed on the substrate 300, and the firstmetal layer 302 is realized by such as patterned layer of copper,aluminum, molybdenum, neodymium, and an alloy group formed the abovemetals. An insulating layer 304 is formed on the first metal layer 302and the substrate 300. An active layer 306 is formed on the insulatinglayer 304. An etch-stop material 308 is formed on the active layer 306,wherein the etch-stop material may be selected from silicon insulating(SiOx) or silicon nitride (SiNx). A photo-resist layer P is formed onthe etch-stop material 308. A lithography process is performed. Forexample, the first metal layer 302 and the first metal layer 303 areused as a self-aligned mask, and a ultra-velvet (UV) light radiatestowards the etch-stop material 308 from the substrate 300.

As indicated in FIGS. 13˜14, a patterned photoresist P′ is formed andused as a mask in an etching process to pattern the etch-stop material308 and form a first etch-stop layer 308 a, a second etch-stop layer 308b and a third etch-stop layer 308 c. In another embodiment, the mask canalso be used to pattern the etch-stop material 308. The first etch-stoplayer 308 a is disposed in the aperture region A2. The second etch-stoplayer 308 b and the third etch-stop layer 308 c are disposed in thewiring region A1. Meanwhile, the UV light radiates towards the substrate300 from the etch-stop material 308 to form the first etch-stop layer308 a, the second etch-stop layer 308 b and the third etch-stop layer308 c. Then, a doping process may be performed to dope a semiconductorimpurity in the active layer 306 to form an active layer 306-1 and adoping layer 306-2.

Referring to FIG. 15, the first metal layer 303, the insulating layer304 (illustrated in FIG. 14), the active layer 306, the first etch-stoplayer 308 a are patterned, and an opening V2 is formed. In FIG. 15, dueto the interrupted by line of section, only a part of the opening V2 isillustrated. Next, referring to FIG. 16, a second metal layer 310 isformed on the second etch-stop layer 308 b, the third etch-stop layer308 c and the doping layer 306-2, and a dielectric layer 312 is formedon the second metal layer 310 and the second etch-stop layer 308 b. Inaddition, an electric conductive layer 316 is formed to cover the firstetch-stop layer 308 a of the aperture region A2 to form a multi-layerelectrode L6. The multi-layer electrode L6 has a maximum width D6 and amaximum height H6. In an embodiment, a protection layer (notillustrated) may be selectively formed on the second metal layer 310,and then a dielectric layer 312 is subsequently formed on the protectionlayer and the second metal layer 310.

In the present embodiment, the array substrate 30 is constituted by theswitch element S2, the storage capacitor C2 and the multi-layerelectrode L6. The material of each layer of the array substrate 30 maybe identical to the material of the corresponding structure of the arraysubstrate 20-1˜20-5. It is noted that the etch-stop material layer 308a˜308 c of the array substrate 30 is defend by a self-alignment process,hence a mask process can be omitted. Besides, the storage capacitor C2of the array substrate 30 has a third etch-stop layer 308 c disposedbetween the first metal layer 302 and the second metal layer 310, and isthus able to provide smaller storage capacitance under the same surfacearea of capacitor.

Referring to FIGS. 25A˜25B, a flowchart of a method for manufacturing anarray substrate according to a second embodiment of the invention isshown. The flowchart illustrates a possible process for manufacturingthe array substrate of the second embodiment, and is not for limitingthe invention. Each of the steps S200˜S221 may be modified or adjustedto fit the needs of the manufacturing process. Steps S200˜S208correspond to the flowchart of FIGS. 12˜14. Step S210˜S217 correspond tothe flowchart of FIGS. 15˜16. FIG. 15 (corresponds to S212) onlyillustrates the situation that the insulating layer 304 not shielded bythe second metal layer 310 is removed. However, it is possible that theinsulating layer 304 not shielded by the second metal layer 310 is notremoved.

In step S214, the dielectric layer 212 may be selectively formed in thewiring region A1, and the dielectric layer (not illustrated) isconcurrently formed on the first etch-stop layer 308 a of the apertureregion A2. In step S216, the dielectric layer (not illustrated) may beselectively formed on the first etch-stop layer 308 a of the apertureregion A2 to increase the height of the multi-layer electrode L6concurrently when a gap adjustment layer and/or a protection layer (notillustrated) is disposed.

According to the method for manufacturing array substrate disclosed inabove embodiments of the invention, in the manufacturing process of eachlayer of the switch element, the multi-layer electrode is concurrentlystacked. The heights H1˜H6 of the multi-layer electrodes L1˜L6 arebetween 2 μm˜10 μm (2 μm≤H≤10 μm), and the maximum widths D1˜D6 of themulti-layer electrode L1˜L6 are between 2 μm˜20 μm (2 μm≤D≤20 μm).Therefore, without using too complicated manufacturing method, theexisting manufacturing equipment would suffice to increase the overallheight of the multi-layer electrode. The multi-layer electrode of thearray substrate disclosed in the above embodiments of the invention isstacked to a height larger than that of the convention single-layeredelectrode. When receiving the same driving voltage, the multi-layerelectrode of the invention provides a larger horizontal electric field,and can thus be used in a PSBP LCD device which requires a largerelectric field. In an embodiment of the invention, the LCD device mayform a switch element, a light blocking layer and a gap adjustment layeron a single array substrate. Since the manufacturing method of theinvention uses single substrate instead of multiple substrates, themanufacturing process is further simplified.

While the invention has been described by way of example and in terms ofthe embodiment (s), it is to be understood that the invention is notlimited thereto. On the contrary, it is intended to cover variousmodifications and similar arrangements and procedures, and the scope ofthe appended claims therefore should be accorded the broadestinterpretation so as to encompass all such modifications and similararrangements and procedures.

What is claimed is:
 1. A method for manufacturing an LCD device,comprising: providing a first substrate; forming an insulating layer onthe first substrate; forming a multi-layer electrode on the firstsubstrate, comprising: forming an active layer on the insulating layer,wherein the active layer has a first bottom surface, a first topsurface, and a first side surface connecting the first bottom surfaceand the first top surface; forming a first etch-stop layer on the activelayer, wherein the first etch-stop layer has a second bottom surface, asecond top surface, and a second side surface connecting the secondbottom surface and the second top surface; and forming an electricconductive layer on the first etch-stop layer, wherein the electricconductive layer contacts the first side surface of the active layer andthe second side surface of the first etch-stop layer, wherein theelectric conductive layer contacts at least a part of the second topsurface of the first etch-stop layer, wherein the electric conductivelayer is metal; forming a switch element on the first substrate andlocated at one side of the multi-layer electrode, and the switch elementhaving a second etch-stop layer, and the first etch-stop layer and thesecond etch-stop layer being formed by the same material; electricallyconnecting the multi-layer electrode and the switch element; providing asecond substrate; assembling the first substrate and the secondsubstrate in pair; and forming a medium layer between the firstsubstrate and the second substrate.
 2. The method for manufacturing anLCD device according to claim 1, wherein the first etch-stop layer andthe second etch-stop layer are concurrently formed.
 3. The method formanufacturing an LCD device according to claim 1, wherein the step offorming the switch element on the first substrate comprises: forming afirst metal layer on the first substrate; forming the insulating layeron the first metal layer and on the first substrate; forming the activelayer on the insulating layer; forming the second etch-stop layer on apart of the active layer; and forming a second metal layer on the activelayer and a part of the second etch-stop layer.
 4. The method formanufacturing an LCD device according to claim 3, wherein after the stepof forming the second metal layer, the method further comprises forminga dielectric layer on the second metal layer and the second etch stoplayer, and then forming the electric conductive layer on the dielectriclayer, and the dielectric layer comprising a light blocking layer or agap adjustment layer.
 5. The method for manufacturing an LCD deviceaccording to claim 3, wherein the LCD device has a wiring region and anaperture region, the switch element is formed within the wiring region,and the multi-layer electrode is formed within the aperture region. 6.The method for manufacturing an LCD device according to claim 4, whereinafter the step of forming the dielectric layer on the second metallayer, the method further comprises forming another dielectric layer onthe dielectric layer.
 7. The method for manufacturing an LCD deviceaccording to claim 3, wherein before the step of forming the secondmetal layer, the method further comprises: doping a conductive ion on asurface of the active layer to form a doping layer.
 8. The method formanufacturing an LCD device according to claim 3, wherein the step offorming the second etch-stop layer further comprises: forming anetch-stop material layer on the active layer; patterning the etch-stopmaterial layer to form the second etch-stop layer, wherein in the stepof patterning the etch-stop material layer, the first metal layer isused for self-aligned exposure, and a light source of the self-alignedexposure radiates towards the etch-stop material layer from the firstsubstrate.
 9. The method for manufacturing an LCD device according toclaim 1, wherein the first side surface of the active layer and thesecond side surface of the first etch-stop layer are completelycontained in the electric conductive layer.
 10. The method formanufacturing an LCD device according to claim 1, wherein the electricconductive layer does not penetrate through the active layer.
 11. Amethod for manufacturing an LCD device, comprising: providing a firstsubstrate; forming an insulating layer on the first substrate; forming amulti-layer electrode on the first substrate, comprising: forming anactive layer on the insulating layer; forming a first etch-stop layer onthe active layer; and forming an electric conductive layer on the firstetch-stop layer, wherein the electric conductive layer contacts at leasta part of a top surface of the first etch-stop layer, wherein theelectric conductive layer is metal; forming a switch element on thefirst substrate and located at one side of the multi-layer electrode,and the switch element having a second etch-stop layer, and the firstetch-stop layer and the second etch-stop layer being formed by the samematerial; electrically connecting the multi-layer electrode and theswitch element; providing a second substrate; assembling the firstsubstrate and the second substrate in pair; and forming a medium layerbetween the first substrate and the second substrate.
 12. The method formanufacturing an LCD device according to claim 11, wherein the electricconductive layer does not penetrate through the active layer.